������:Advanced Semiconductor, Inc.
�a(ch��n)Ʒ�N�:���l(RF)�p�O���w��
RoHS:��
���w�����:Bipolar Power
���g(sh��):Si
���w�ܘO��:NPN
ֱ����늘O/Base Gain hfe Min:15
��늘O���l(f��)��O���늉� VCEO:30 V
�l(f��)��O - ���O늉� VEBO:3 V
��늘O�B�m(x��)���:25 A
��С�����ض�:- 65 C
������ض�:+ 200 C
���b�L(f��ng)��:Screw Mount
���b / ���w:M175
���b:Tray
�����l��:860 MHz
���:RF Bipolar Power
�̘�(bi��o):Advanced Semiconductor, Inc.
Pd-���ʺ�ɢ:310 W
�a(ch��n)Ʒ���:RF Bipolar Transistors
��e:Transistors