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IPD80R1K0CE PDF�Y��
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- �����̣�INFINEON[Infineon Technologies AG]
- PDF�ļ���С��2321.74 Kbytes
- PDF�ļ�퓔�(sh��)����15�
- ������Metal Oxide Semiconductor Field Effect Transistor
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- ���b��ʽPackage��DPAK
- �O��Polarity��N-CH
- ©Դ�O����늉�VDSS��800V
- �B�m(x��)©�O���ID��5.7A
- ���b�L(f��ng)��SMD/SMT
- ���b/�⚤��TO-252-3
- ͨ����(sh��)����1Channel
- ���w�ܘO�ԣ�N-Channel
- Vds-©Դ�O����늉���800V
- Id-�B�m(x��)©�O�����5.7A
- Rds On-©Դ��(d��o)ͨ��裺800mOhms
- Vgs th-��Դ�O�ֵ늉���2.1V
- Vgs - �ŘO-Դ�O늉���20V
- Qg-�ŘO늺ɣ�31nC
- ��С�����ضȣ�-55C
- ������ضȣ�+150C
- ���ã�Single
- Pd-���ʺ�ɢ��83W
- ͨ��ģʽ��Enhancement
- �߶ȣ�2.3mm
- �L�ȣ�6.5mm
- ϵ�У�CoolMOSCE
- ���w����ͣ�1N-Channel
- ���ȣ�6.22mm
- �½��r�g��8ns
- �����r�g��15ns
- �����P(gu��n)�]���t�r�g��72ns
- ���ͽ�ͨ���t�r�g��25ns
- Packing Type��TAPE & REEL
- Moisture Level��1
- RDS (on) max��950.0m?
- IDpuls max��18.0A
- VDS max��800.0V
- ID max��5.7 A
- RthJC max��1.5 K/W
- QG (typ @10V)��31.0 nC
- Package��DPAK (TO-252)
- Rth��1.5K/W
- QG��31.0 nC
- ID (@25��C) max��5.7 A
- Budgetary Price ?�/1k��0.49
- Operating Temperature min��-55.0��C
- Ptot max��83.0W
- Ptot max��83.0 W
- Polarity��N
- IDpuls max��18.0 A
- VDS max��800.0 V
- Operating Temperature min��-55.0 ��C
- RDS (on) (@10V) max��950.0 m?
- Pin Count��3.0 Pins
- RthJA max��62.0K/W
- VGS(th) min max��2.1 V 3.9 V
- Mounting��SMT
- RthJC max��1.5K/W
- RthJA max��62.0 K/W
- Special Features��price/performance
- VGS(th) min max��2.1V 3.9V
- RDS (on) max��950.0 m?
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