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VB40170C-E3
規(guī)格信息：

Diode Configuration:Dual Common Cathode

Repetitive Reverse Voltage Vrrm Max:170V

Forward Current If(AV):40A

Forward Voltage VF Max:1.2V

Forward Surge Current Ifsm Max:200A

Operating Temperature Max:175°C

Diode Case Style:TO-263AB

No. of Pins:3Pins

Packaging:Each

Product Range:VB401 Series

Automotive Qualification Standard:\-

SVHC:To Be Advised

VB40170C-E3

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	產(chǎn)品購(gòu)買
VB40170C-E3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	VISHAY[Vishay Siliconix]	92.05 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買
VB40170C-E3/4W	肖特基二極管與整流器 40A 170V TrenchMOS	Vishay Semiconductors	104.94 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買
VB40170C-E3/8W	肖特基二極管與整流器 40A 170V TrenchMOS	Vishay Semiconductors	104.94 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買
VB40170C-E3/8W	DIODE ARRAY SCHOTTKY 170V TO263	Vishay General Semiconductor - Diodes Division	101.91 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買
VB40170C-E3_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier	VISHAY[Vishay Siliconix]	85.43 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買
VB40170C-E34W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	VISHAY[Vishay Siliconix]	92.05 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買
VB40170C-E38W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	VISHAY[Vishay Siliconix]	92.05 Kbytes	共4頁(yè)	產(chǎn)品購(gòu)買