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VB30100SG
規(guī)格信息：

制造廠商:VISHAY[Vishay Siliconix]

描述:High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號(hào)	產(chǎn)品購買
VB30100SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A	VISHAY[Vishay Siliconix]	168.82 Kbytes	共5頁	V20150S,V20150SG,V20200C,V10150C,V30100C,V10150S,V30100P_08,V20100C,V30100S,V20100R	產(chǎn)品購買
VB30100SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier	VISHAY[Vishay Siliconix]	152.57 Kbytes	共5頁		產(chǎn)品購買
VB30100SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A	VISHAY[Vishay Siliconix]	168.82 Kbytes	共5頁	V20150S,V20150SG,V20200C,V10150C,V30100C,V10150S,V30100P_08,V20100C,V30100S,V20100R	產(chǎn)品購買
VB30100SG-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A	VISHAY[Vishay Siliconix]	168.82 Kbytes	共5頁	V20150S,V20150SG,V20200C,V10150C,V30100C,V10150S,V30100P_08,V20100C,V30100S,V20100R	產(chǎn)品購買
VB30100SG-M3/4W	DIODE SCHOTTKY 30A 100V TO-263AB	Vishay General Semiconductor - Diodes Division	97.50 Kbytes	共4頁		產(chǎn)品購買
VB30100SG-M3/8W	DIODE SCHOTTKY 30A 100V TO-263AB	Vishay General Semiconductor - Diodes Division	97.50 Kbytes	共4頁		產(chǎn)品購買
VB30100SG-M3_15	High-Voltage Trench MOS Barrier Schottky Rectifier	VISHAY[Vishay Siliconix]	80.16 Kbytes	共4頁		產(chǎn)品購買